发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To reduce a steady power consumption by allowing an activation circuit equipped with a fuse not to supply a current to a ROM storing the address of a defective cell when an auxiliary cell is not used. CONSTITUTION:Unless a cell is a memory cell array is not replaced with the auxiliary cell, and has no defect to disconnect all fuses F0-F9 in an address storing ROM1 for a defective cell, the fuse F of the activation circuit 2 remains disconnected. In that state, the node N1 of the circuit 2 becomes H, and transistors Q12 and Q11 are turned on and off, respectively, bring a node N2 to L. Thus a transistor Q13 is turned off, and no current is supplied to the ROM1 through the transistor Q13, whereby a steady power consumption can be reduced.</p>
申请公布号 JPS62177798(A) 申请公布日期 1987.08.04
申请号 JP19860018960 申请日期 1986.01.30
申请人 FUJITSU LTD 发明人 TAKEMAE YOSHIHIRO
分类号 G11C29/00;G11C17/06;G11C17/14;G11C29/04 主分类号 G11C29/00
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