| 发明名称 |
Method of manufacturing thin film transistor |
| 摘要 |
An improved process for manufacturing a thin film transistor uses two masks for etching and therefore one mask alignment. The technical effect of said process is to provide the thin film transistor with low cost and enhanced yield.
|
| 申请公布号 |
US4684435(A) |
申请公布日期 |
1987.08.04 |
| 申请号 |
US19860829001 |
申请日期 |
1986.02.13 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KISHI, KOHHEI;KODEN, MITSUHIRO;FUNADA, FUMIAKI |
| 分类号 |
G02F1/1368;H01L21/308;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/306;C23F1/02 |
主分类号 |
G02F1/1368 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
