发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To form a thin metallic film having excellent purity and accuracy on a substrate in a vacuum by impulsively irradiating acceleration ions in the stage of irradiating a metal for vapor deposition and acceleration ions and forming the thin metallic film on the substrate. CONSTITUTION:The substrate 2 to be treated is placed in a vacuum vessel 1 and the acceleration ions 11 by the plasma generated in an ion source 3 are irradiated thereto. The metal for vapor deposition is evaporated at the same instant by an electron gun 4 which irradiates the generated evaporating metal 51 to the substrate 2 thereby forming the thin film consisting of the evaporating metal on the substrate. The temp. of the substrate 2 is measured by a temp. measuring instrument 8 which inputs the signal thereof to a power source 6 for the ion source 3 having a high-speed switch to control the ion source. A pulse signal is fed to the ion source 3 and at the same time, the thermion emission quantity of the electron gun 4 and a shutter 9 are cooperatively operated by an electron gun control device 7 by which the thin metallic film having the high purity and accuracy is formed on the surface of the substrate 2.
申请公布号 JPS62177173(A) 申请公布日期 1987.08.04
申请号 JP19860017303 申请日期 1986.01.29
申请人 HITACHI LTD 发明人 HASHIMOTO ISAO;OKA YUZO
分类号 H01L21/3205;C23C14/22;C23C14/24;C23C14/48;H01L21/203;H01L21/285 主分类号 H01L21/3205
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