| 摘要 |
PURPOSE:To uniformly form a film having good quality on the surface of a substrate by supplying a reactive gas from an auxiliary electrode having many glow discharge chambers to the front surface of the substrate in the stage of supplying the reactive gas to the inside of a vacuum vessel and subjecting the substrate to the surface treatment by the glow discharge. CONSTITUTION:The substrate 2 which consists of Al, stainless steel, etc., and is to be treated is installed in a reduced pressure reaction chamber 1 and the auxiliary electrode 3 in common use of a reactive gas supplying device provided with the many glow discharge chambers 6 each having a gas supply port 5 at the center is installed to the front surface thereof to face the substrate 2. A voltage is impressed to the auxiliary electrode 3 to maintain the same at negative potential and to the chamber 1 to maintain the same at the positive potential. Gaseous H2 is introduced into the vacuum vessel 1 to generate the glow discharge and the substrate 2 is heated to 250 deg.C. Gaseous SiH4 is supplied with H2 as a carrier gas from the gas supply ports 5 and SiH4 is activated with the decomposition, electrolytic dissociation, etc. by the glow discharge to form the amorphous Si film having good quality on the surface of the substrate 22.
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