| 摘要 |
PURPOSE:To improve the reproducibility of the shape of a corrugation, especially its depth, by transferring a resist corrugation to a protection film to form a protection film corrugation and using the protection film corrugation as a mask to form a corrugation on a substrate. CONSTITUTION:An n-type InP substrate is used as the substrate 1, an SiO2 film is formed on the substrate 1 as the protection film 2 and AZ resist is applied to the surface of the protection film 2 and baked. A resist corrugation 3 is formed by using a two-luminous flux interference exposure method using a He-Cd laser beam as a light source. Then, reactive etching is executed in CHF3 gas by using the resist corrugation as a mask to form an SiO2 corrugation as the protection film corrugation 4. Then, etching is executed by using the SiO2 corrugation as a mask, a corrugation 5 with required depth is transferred to the InP substrate, and finally the SiO2 corrugation 4 is removed. Consequently, the reproducibility of the shape of the corrugation, especially its depth, can be improved.
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