| 摘要 |
PURPOSE:To largely improve the characteristic value such as of a short-circuit current of a photoelectric conversion element by forming another substantially intrinsic thin film by a plasma CVD method between a conductive thin film formed by a plasma CVD method and a substantially intrinsic thin film. CONSTITUTION:A first electrode, a first conductive thin film, a second substantially intrinsic thin film thicker than a thinner first substantially intrinsic thin film, a second conductive thin film and a second electrodes are sequentially formed on a glass substrate. In this case, after the first film is formed by a plasma CVD method, the supply of an impurity for imparting a first conductivity is stopped to form the thinner first film. The thickness of the thinner first film is set to 25 to 500 Angstroms. |
