| 摘要 |
PURPOSE:To use the same circuit for all reading circuits corresponding to respective wave lengths by changing the depth of the joint of photodetecting elements and permitting each irradiated wavelength to obtain an equivalent electrical signal. CONSTITUTION:Reading circuits for signal processing are arrayed and formed in an N-type single crystal substrate 1 by semiconductor making techniques such as thermal oxidation, photoetching, ion implantation, and thermal diffusion. First, boron, etc., are diffused to form P-Well. At that time any one photodetecting part 6c out of photodetecting elements can be simultaneously formed. Next, boron, etc., are diffused to form photodetecting parts 6a and 6b. If thermal diffusion and ion implantation are adjusted, the diffusion depth of each photodetecting part can be changed with respect to the wavelength to be used. Thus the same output can be obtained with respect to red, green and the blue wavelength, and the same reading circuit to red, green and blue wavelengths, and the same reading circuit can be formed in a single crystal semiconductor substrate with respect to each photodetecting element.
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