PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To obtain semiconductor single crystal which is excellent in quality and available in a semiconductor laser or the like by providing the means inhibiting epitaxial growth to one part of a silicon base plate and subjecting a compd. semiconductor to epitaxial growth. CONSTITUTION:The means inhibiting epitaxial growth is provided by sticking the Si3N4 films 2 having 2mum breath in a striped shape at 2mum interval in the direction of (20-45 deg.) angle theta crossed with the base plate <100> direction on an Si base plate 1 by a chemical vapor deposition method. Then the base plate 1 is heated at 350-400 deg.C and 200Angstrom amorphous GaAs is grown thereon by introducing 4l/min trimethylgallium and arsine in 3.2X10<-5>/min and 1.7X10<-3>/min molar fraction respectively with H2 as a carrier gas. Then after heating the base plate 1 at 630 deg.C and subjecting GaAs to single crystallication, the growth is continues and a GaAs epitaxial film 3 is grown so as to cover the Si3N4 films 2 and thereby the single crystalline film having >=1mum thickness is obtained.