| 摘要 |
PURPOSE:To attain the large current capacity, the reduction in the element area and the chip area by using the parallel connection of an N-channel FET and a P-channel FET as a switching element placed in a semiconductor integrated circuit. CONSTITUTION:The P-channel FET 18 is arranged in parallel with the N- channel FET 16 to compensate the saturated region of the FET 16. When a switching signal P goes to an L level, most of the charging current to a capacitor 12 is fed from the N-channel FET 16 and a current from the P-channel FET 18 charges up the capacitor 12 from the point of time when the FET 16 is saturated. Since the P-channel FET 18 is used to compensate the current, a small element area is enough for the purpose. Thus, the large current capacity and the reduced element area are attained.
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