| 摘要 |
PURPOSE:To provide a styrene polymer containing two silicon atoms per structural unit, highly resistant to dry etching as a resist material, useful for fine pattern formation in the double resist process. CONSTITUTION:For example, p-chlorostyrene is made to react with a compound of formula I (R1-R5 are each lower alkyl or H) followed by reaction which azobisisobutyronitrile to obtain the objective styrene polymer of formula II (n is positive integer). USE:A base plate on which an organic polymer layer is formed, is provided thereon with a resist layer consisting of the styrene polymer of the formula II followed by forming a negative pattern on said resist layer by X-ray, electron beam or ultraviolet light, said organic polymer layer being subjected to dry etching with said negative pattern as a mask, thus forming a fine pattern. |
