| 摘要 |
PURPOSE:To obtain the characteristics of a transistor such that high integration density can be implemented, resistance to latch-up is high, a leak current is minute, a drain current is large and a junction withstanding voltage is high, by selectively forming a diffused layer, whose conductivity is reverse with respect to a substrate, by ion implantation between a Schottky junction region as a source/drain region and a gate. CONSTITUTION:On the surface of a substrate 31, a field oxide film 32 and a gate insulating film 33 are formed. A polysilicon gate 34, in which phosphorus is doped at a high concentration, is formed. An SiO2 film 35 is grown, a Pt layer 36 is deposited and a platinum silicide layer 37 is formed. The layer 36 on the film 35, which is not made to be silicide, and the film 35 are removed. An offset part is formed on the side surface of the polysilicon gate. Boron ions are implanted in the offset part, and a P<+> type diffused layer 38 and an SiO2 film 39 are formed. Then an SiO2 film 40 is formed by a CVD method. A contact hole H is provided in correspondence with the layer 37 as a Schottky contact. A Ti layer 41 and an Al layer 42 are sequentially laminated, and a source and a drain are formed. Thus the P<+> type diffused layer 38 is formed between the region 37 and a channel without giving damage to the Schottky junction part.
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