发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain excellent turn-ON and turn-OFF characteristics by minute gate power, and to control turn-ON and turn-OFF by an optical signal by adopting amplifying gate structure by separating gate electrodes for the turn-ON and the turn-OFF and forming both gate electrodes in a voltage driving type. CONSTITUTION:When a turn-ON gate electrode G1 is biassed so as to be brought to positive voltage to a layer P2 under the state in which voltage is applied so that an anode A is brought to positive voltage to a cathode K, a channel is formed in the layer P2, a path of a layer P1-N1-the P2 channel-N2 is formed, and the path of the layer P1-N1-P2-N2 is turned ON. When a turn-OFF gate electrode G2 is biassed to negative voltage to the cathode on an ON state, on the other hand, a channel is formed in a layer N2, anode currents flow through the layer P1-N1-P2-the N2 channel-P3, and anode currents are branched from a path of P1-N1-P2-N2. Accordingly, a current component flowing through the path of P1-N1-P2-N2 reduces, and the path is turned OFF when the current component reaches to holding currents or lower.
申请公布号 JPS6053078(A) 申请公布日期 1985.03.26
申请号 JP19830161452 申请日期 1983.09.02
申请人 TOSHIBA KK 发明人 MATSUDA HIDEO
分类号 H01L29/74;H01L29/744;H01L29/745;H01L29/749;(IPC1-7):H01L29/74 主分类号 H01L29/74
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