| 摘要 |
PURPOSE:To reduce a production cost, by applying a reverse bias to a photoelectric conversion device so as to insulate a shorted place electrically (RB process), repairing the defective place, simultaneously performing RB at every stage in the case of an integrated structure, thereby making the time required for the RB process equal to the time in a single structure. CONSTITUTION:On a glass substrate 12, a first electrode 13 of ITO/SnO2, P-type a-SiC 14, I-type a-SiC 14 and N-type mu-C-Si 14 are formed. As a second electrode 15, a laminated electrode of ITO, Ag and Al is used. Such photoelectric conversion devices are integrated in 15 stages. The area of an element is, e.g., 69.83cm<2>. The yield rate of 50 elements having the efficiency of 7% or more in a structure before the RB is about 30%. A negative electrode is connected to the P-type a-SiC 13, and a positive electrode is connected to the N-type mu-C-Si 15 in the RB. The output of a power source 16 is gradually increased and up to 8V is applied to the element of one stage. At this time, an RB end point, at which a current is suddenly stopped to flow, is located in the vicinity of 4-6V in many cases. |
