发明名称 RESONANCE HOT ELECTRON TRANSISTOR
摘要 PURPOSE:To implement an RHET circuit, in which base resistance is decreased and its uniformity is improved, a current amplification factor is large and a conspicuous resonance tunneling effect is indicated, by arranging an emitter electrode, a base electrode and collector electrode in a laminated structure of gold germanium/gold/tungsten silicide in concentric circles, with the collector electrode located at the outermost side. CONSTITUTION:On a defined emitter layer 16, a base layer 14 and a collector layer 12, gold germanium, gold and tungsten silicide are sequentially laminated. Patterning is performed, and an emitter electrode 7, a base electrode 8 and a collector electrode 9 are patterned in concentric circles. In this pattern, the width of a path for a base current is expanded, and the uniformity in length is improved to a large extent than in a conventional example. The emitter electrode 7 is made to be a ring shape. A base electrode 8a is provided at the central position, and a base electrode 8b is provided at the outside. Then the uniformity of the length of the path of the base current is further improved.
申请公布号 JPS62176161(A) 申请公布日期 1987.08.01
申请号 JP19860016699 申请日期 1986.01.30
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 IMAMURA KENICHI;YOKOYAMA NAOKI
分类号 H01L29/68;H01L29/20;H01L29/76 主分类号 H01L29/68
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