摘要 |
PURPOSE:To restrain the sliding phenomenon of an interconnection from occurring by a method wherein the width of metallic or alloy interconnection to be formed on a semiconductor substrate is limited to a specific value or less while an interconnection flowing large current is composed of multiple narrow interconnections in parallel with one another. CONSTITUTION:Metallic interconnections 2, 4 comprising e.g. aluminum in relatively wide width on a semiconductor chip 1 are divided into interconnections 20, 40 in respectively narrow width not exceeding 5mum including another interconnection 3. In such a constitution, the interconnections can restrain the sliding phenomenon as well as the defective circuit from occurring by arranging multiple interconnections in parallel with one another to be substituted for one interconnection in wide width. |