| 摘要 |
PURPOSE:To perform a highly precise working exactly same as the size of an etching mask by a method wherein a high speed beam of neutral electrons or molecules, which were formed by neutralizing ions, is made to irradiate on the surface of a sample. CONSTITUTION:The ion beam emitted from an ion source 31 and accelerated by an electrode 32 is differentially evacuated from its front and back sides by vacuum pumps 33 and 34, it passes through the charge exchanging vessel 35 which is maintained at the gas pressure of 10<-2> Pa or thereabout, and the greater part of the ions is neutralized. The remaining ions which have not been neutralized are deflected by a deflecting plate 36, and they are not made to irradiate on the sample 37 to be etched. Using the device, the neutral Cl and Cl2 beams accelerated to about 400eV, for example, are made to irradiate on the sample 37 consisting of Si to be etched. As the neutral beam is not accelerated in an electric field, the direction of irradiation of ions is not bent even when an electric charge is accumulated on the surface of the sample. The shape of the cross-section of the sample 37 after etching is formed vertical to the etching mask, and a highly precise etching processing can be performed.
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