| 摘要 |
PURPOSE:To eliminate the defect at the time of mounting of a solder bump electrode on a substrate, which is caused by a small solder ball, and to obtain a stable and highly reliable semiconductor device by forming a flattening insulating film for flattening stepped parts. CONSTITUTION:A flattening insulating film 19 consisting of an SOG (Spin on Glass) or polyimide film is formed on the surface of an Si substrate 1 and the surface of a protective insulating film 7 in such a way as to flatten stepped parts 17 and 18 and a bump base metal film 8 is formed on the surface of bump electrode forming hole 70, the surface of the protective insulating film 7 and the surface of the flattening insulating film 19. When the SOG film is coated, its film thickness is formed in such a way as to become a thickness of 0.1-0.3mum or thereabouts at the part where its film thickness on the surface of a scribing line region 1 become uniform and when the polyimie film is coated, its film thickness is formed in such a way as to become a thickness of 1nu3mm or thereabouts as well. After this, the flattening insulating film 19 on the regions for making an electrical contact with the outside, that is, the solder bump electrode forming hole 70 and its periphery, is removed by etching using a photoengraving technique.
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