| 摘要 |
PURPOSE:To improve the coverage of interconnection by a method wherein the first and the second insulating layers comprising different kinds of materials are laminated on the surface of a semiconductor substrate and then firstly the second insulating layer is isotropically etched and secondly the first insulating layer is anisotropically etched. CONSTITUTION:The surface of a semiconductor substrate 11 wherein a diffused region 12 is buried is coated with a silicon dioxide film 13 and a silicon nitride film 14. The silicon nitride film 14 is selectively removed in an isotropic mode by dryetching process using a photoresist as a mask. At this time, the inner surface f a hole 16 made into the silicon nitride film 14 is taken into a gentle tapered shape by the etching process. Next, the silicon dioxide film 13 is selectively removed in an anisotropic mode by reactive ion etching process; the photoresist 15 making another hole 17 is removed; and the silicon nitride film 14 and the diffused region 12 are entirely covered with aluminum to form a wiring 19. Through these procedures, the coverage of interconnection can be improved.
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