| 摘要 |
PURPOSE:To form a thin film having excellent characteristics in an excellent controllable manner by a method wherein the sample temperature necessary for formation of the thin film is controlled by quickly heating or cooling it by the second in such a manner that the sample only in the container, in which the thin film is formed, is mainly heated up. CONSTITUTION:The flow rate of oxygen gas is set at 5l/min. by a flow-meter 25, purge gas is introduced into a reaction chamber 9 through a purge gas introducing cylinder 10, a door 22 is opened in the state wherein oxygen gas is introduced, n N-type (100) silicon substrate 8 of 10OMEGAcm is conveyed and it is inserted into a reaction chamber 9. Besides, the temperature in the reaction chamber 9 is to be 100 deg.C or below. Subsequently, the door 22 is closed, and after a purging operation has been performed for 30sec, the flow rate of gas is set at 1l/min., and the silicon substrate 8 is heated up to 1,100 deg.C using a lamp 13. At this time, the silicon substrate 8 reaches 1,100 deg.C in about 5sec. After a thermal oxidization has been performed with the heating period of 60sec, the silicon substrate 8 is cooled until it reaches 200 deg.C or below, and the thermally oxided silicon substrate 8 is picked out from the reaction chamber.
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