| 摘要 |
PURPOSE:To obtain the semiconductor device provided with a passivation film having very conspicuous dampproof property without releasing hydrogen in a high temperature treatment process by a method wherein a passivation film of two-layer structure, in which a fluorine-containing silicon nitride film formed by performing a plasma chemical vapor-phase growing method and another silicon nitride film formed by performing a plasma chemical vapor-phase growing method using the mixed gas of silane and ammonia or nitrogen are deposited as the upper and the lower layers, is provided. CONSTITUTION:The titled semiconductor device is composed of a P-type silicon substrate 1 a thick field oxide film 2, N type regions 3 and 4 whereon a source and drain region is formed respectively, a gate insulating film 5, a polycrystalline silicon gate electrode 6, a P-type layer 7 on which a channel stopper will be formed, aluminum wiring conductors 8 and 9, a silicon oxide insulating film 10, and silicon nitride films 11 and 12, having the film quality different with each other, on which the lower layer and the upper layer of passivation film will be formed. At this point, the mixed gas of disilicon hexafluorde (Si2F6) and nitrogen (N2), for example, is used for deposition of the lower layer of the fluorine-containing silicon nitride film 11 by performing a fluorine-containing plasma chemical vapor-phase growing method. |
