| 摘要 |
PURPOSE:To facilitate the formation of a spherical solder bump electrode and to prevent short-circuit between the solder bump electrode and a diciding line region by a method wherein insulating films are extended to the surface of the dicing line region and formed in such a way that a stepped part, which is formed at the boundary part between an element isolation region and insulating films which are each formed in the element isolation region and on the surface of this element isolation region, is alleviated. CONSTITUTION:A solder film 91 is formed on the surface of an insulating film 7a and the surface of an Al wiring layer 5a using a metal mask by a vacuum evaporation method. Then, the semiconductor wafer is heated at a temperature higher by 30-50 deg.C than the melting point of a solder to fuse the solder film 91 and a spherical solder bump electrode 93 is formed on the surface of the Al wiring layer 5a and the surface of the insulating film 7a applying the nature of a solder which is turned into a spherical form. At this time, as an insulating film 3a and the insulating film 7a are extended to the surface of a dicing line region 11 to alleviate the stepped part, the solder film fused on the surface of the insulating film 7a on the dicing line region 1 goes up smoothly the surface of the insulating film 7a to gather on the surface of the Al wiring layer 5a and to form the spherical solder bump electrode 93.
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