发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To form a high-accuracy pattern and to suppress the generation of hillocks, etc., by using a phenol novolak resin as a thin org. high-polymer film thereby suppressing a standing wave effect. CONSTITUTION:Three-layered resists are formed on a substrate 1 by successively laminating the thin org. high-polymer film 2, a thin intermediate layer film 3 and a thin resist film 4 on the substrate. A UV resist is applied to the thin film 2, an inorg. high polymer to the thin film 3, and a UV resist, electron ray resist, X-ray resist, etc., are applied to the thin film 4. Then the thin film 2 effectively flatten the steps of the substrate and the thin film 4 is uniformly coated. The pattern having excellent dimensional accuracy is thus obtd. regardless of the pressure or absence of the substrate.
申请公布号 JPS62174737(A) 申请公布日期 1987.07.31
申请号 JP19860017095 申请日期 1986.01.29
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 IKITSU HIDEO
分类号 G03F7/11;G03C1/00;G03F7/09;H01L21/027 主分类号 G03F7/11
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