THIN FILM DEPOSITION DEVICE

摘要

PURPOSE:To obtain a uniform thin film deposition at a high speed and to obtain a good deposition characteristic even with a fine groove by providing a magnetic field impressing mechanism to the rear side of an anode thereby forming a magnetron discharge region having a distribution of good uniformity on a target. CONSTITUTION:A sputtering gas such as Ar is introduced from a gas introducing port 13a of a vessel 11 into a deposition chamber 13 and high-frequency electric power is impressed to a cathode 4 from a high-frequency power source 16 to generate a glow discharge 31 between the cathode and the anode 3. The magnetron discharge is generated at the same instant in the respective inter-magnetic pole spaces of permanent magnets 20 of the magnetic field impressing mechanism disposed on the rear side of the anode 3 and the electrons repeat many times of collision against Ar atoms to generate a plasma region 32 of a high density along the inter-magnetic pole spaces. The region 32 shifts on the target 2 when the magnets 20 are moved and the deposition seeds sputtered from the target 2 material are deposited at a high speed on the surface of the substrate 1. The above-mentioned mechanism is preferably the mechanism formed by attaching the plural magnets 20 at specified intervals on a belt 21 forming an endless track and moving the respective magnets 20 in one direction so as to successively face the rear of the anode 3.