| 摘要 |
PURPOSE:To prevent interconnection from forming a hillock by a method wherein a silicon oxide film is formed on the surface of a substrate by plasma CVD process at a specified temperature and after spin coating overall surface with a spin on glass film and heat treatment, a silicon nitride film is formed by plasma CVD process at another specific temperature. CONSTITUTION:An insulating film 2 comprising a silicon oxide and a phosphorus glass layer is formed on the main surface of a P-type silicon substrate 1 to form an aluminum interconnection 3 as the first layer on the film 2. Then, a silicon oxide film 4 is formed by leading-in SiH4 and N2O at the low temperature not exceeding 200 deg.C. Next, overall surface is spin-coated with spin on glass and heat treated at 450 deg.C to improve the flatness. Furthermore, SiH4 and NH4 are led to overall surface by plasma CVD process at high temperature not exceeding 300 deg.C to form a solid and fine silicon nitride film 6 with excellent humidity resistance. Finally, an aluminum interconnection 7a s the second layer is formed. Through these procedures, the interconnections can be prevented from forming a hillock as well as the nitride film from swelling.
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