| 摘要 |
PURPOSE:To form a thick oxide film in a short period when compared with the case where ultraviolet rays are not projected by a method wherein, when a silicon carbide semiconductor is going to be thermally oxided, ultraviolet rays are made to irradiate on the semiconductor. CONSTITUTION:The thermal oxidization of a silicon carbide semiconductor is performed by heating the semiconductor in an oxygen atmosphere at 800-1,300 deg.C desirably at 90-1,100 deg.C. Ultraviolet rays are made to irradiate on the silicon carbide semiconductor while it is being thermally oxidized. The silicon carbide semiconductor is photoexcited by projecting ultraviolet rays, pairs of electrons and holes are grown on the surface layer of the silicon carbide, and it is considered that the forming speed of an oxide film is increased. Besides, a mercury lamp, a helium-cadmium laser, an excimer laser and the like are enumerated as the ultraviolet rays. Silicon carbide 8 is placed on a sample stand 7, they are put into a quartz pipe 3, the quartz pipe is heated up to about 1,000 deg.C by an electric lamp 5, and oxygen is supplied from a gas flow-in hole 4. The light of the mercury lamp 1 is condensed by a lens 2 and it is made to irradiate on the silicon carbide 8. |
