| 摘要 |
PURPOSE:To realize a fined pattern, and to improve high-frequency characteristics by operating an insulator layer coating a polycrystalline silicon layer in order to isolate an electrode, leaving the so-called side wall through an anisotropic etching means. CONSTITUTION:An electrode 9 continuously formed in an emitter region 5 is projected from a wiring layer 8 laminated and shaped in a base region 3 in an N-P-N transistor. A side wall consisting of a second insulator layer 7 is applied onto the side wall of the layer 8. The wiring layer 8 connected to the base region 3 is patterned, a bonding pad is formed to one part of the layer 8, and bonding pad for an emitter is also shaped similarly, thus completing the N-P-N transistor. Accordingly, a pitch between polycrystalline silicon layers can be improved because it may be determined in consideration of the thickness of the side wall 7 applied onto the side wall of the layer 8 and the current capacity of the leading-out electrode for the base 3, Thus easily attaining high- frequency characteristics.
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