| 摘要 |
PURPOSE:To increase the permissible error of a mask alignment by forming so that the long axis directions of rectangular emitter and collector regions cross perpendicularly. CONSTITUTION:GaAs collector contact region 20 and collector region 22 are formed by film growth on a semi-insulating GaAs substrate 19, and an insulating film 21 is formed on the periphery of the region 22 to form the collector region rectangularly. Then, a GaAs base region 23, an AlGaAs emitter region 24 and an emitter contact region 25 are formed by film growth. Then, the regions 25, 24 are so mesa etched rectangularly as to cross perpendicularly with respect to the region 22, and the regions 23, 22, 21 are then mesa etched. At this time, since the region 22 is allowed to displace in the long axial length of the rectangle, a restriction in the mask alignment can be reduced.
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