| 摘要 |
PURPOSE:To detect the proper end point of etching easily by forming a film onto a substrate, leaving a scribing region and stopping etching when the region is exposed. CONSTITUTION:A film 2 as a gate oxide film is shaped, leaving a scribing region 1a on a semiconductor substrate 1. A film to be etched 8 is formed on the whole surface. The surface of the film 8 is etched until the scribing region 1a is exposed. Accordingly, since no film is shaped in the scribing region, substrate itself is exposed when the film to be etched is etched and the scribing region is exposed, thus easily detecting the end point of etching by detecting the exposure of the substrate.
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