发明名称 |
HIGH-PERFORMANCE DRAM ARRAYS INCLUDING TRENCH CAPACITORS |
摘要 |
Parallel elongated trenches in a silicon substrate are utilized to form multiple distinct memory cell capacitors on each continuous wall of each trench. Chanstops are formed between adjacent capacitors to achieve electrical isolation. A separate word line overlies each trench wall and is connected via respective MOS transistors to the spaced-apart capacitors formed on the wall. A reliable high-density memory characterized by excellent performance is thereby realized. |
申请公布号 |
WO8700690(A3) |
申请公布日期 |
1987.07.30 |
申请号 |
WO1986US01426 |
申请日期 |
1986.07.08 |
申请人 |
AMERICAN TELEPHONE & TELEGRAPH COMPANY |
发明人 |
LYNCH, WILLIAM, THOMAS |
分类号 |
G11C11/401;H01L21/76;H01L21/82;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H01L29/94 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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