AN ELECTRODE FOR A SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes an electrode having triple-layer electrode structure or a multilayer interconnecting structure comprising a contact (a lower conductive) layer (17) of aluminum or its alloy which comes into contact with a silicon substrate (1), a barrier (18) of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g. tungsten), and a (upper) conductive layer (19) of aluminium or its alloy. The TiN-W barrier layer (18) prevents over-dissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature.