| 摘要 |
A multiple transistor, preferably of the N-P-N type with a common emitter, has the emitter implemented as a highly doped bottom diffusion (12) in a P substrate (11) or as a highly doped N substrate (33). The base consists of a P-doped bottom diffusion (13) under the epitaxial collector layer (15) and the separate collector connections are made as shallow contact diffusions in the collector layer (15). The collector region is limited by an inner ring (17A, 17B) of the same conductive type as the base layer (13) and makes contact with the latter. An outer ring (18, 18A) of the same conductive type (N) as the emitter layer makes contact with this and is also utilized for contacting the emitter layer when this layer consists of a bottom diffusion (12). |
