| 摘要 |
PURPOSE:To prevent insulating film breakdown by a method wherein a polycrystalline silicon film and metal film are formed on a semiconductor substrate and a diffusion layer opposite in conductivity to the semiconductor substrate, through the intermediary of an insulating film, and the diffusion layer is large enough to cover a polycrystalline silicon wiring, metal wiring, and polycrystalline silicon resistor. CONSTITUTION:A P-well 5 is formed on an N-type substrate 6 and thereon a fuse element.polycrystalline silicon resistor 2 is built with the intermediary of a silicon oxide film 4. Further, an Al electrode 1 is built through the intermediary of a silicon of a silicon oxide film 3 and a contact 7. In a circuit designed as such, with a diffusion layer lying just under a polycrystalline silicon resistor or a metal film through the intermediary of an insulating film, no short- circuiting occurs involving a substrate even in the presence of an insulating film breakdown because a short-circuiting occurs between the fuse element.polycrystalline silicon resistor and the diffusion layer isolated from the substrate by a junction. This realizes a fail-safe mechanism withstanding an interlayer insulating film breakdown.
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