| 摘要 |
<p>PURPOSE:To manufacture a photosensor having excellent and stable sensor characteristics by forming an insulating layer on an electrode forming portion on one side surface of a photoconductive layer, then forming an ohmic contact layer forming material layer thereon and then electrode forming material layer thereon, and then removing respective forming material layers except the electrode forming portions. CONSTITUTION:An a-Si photoconductive layer 4 is deposited on a glass substrate 2, and an SiO2 layer 6' of an insulating layer forming material is deposited on the layer 4. Then, a reactive ion etching is executed, the layer 6' is removed, and an insulating layer 6 is formed. Subsequently, an N<+> layer 8' is deposited on one side surfaces of the layers 4, 6 of the exposed portions. Then, a conductive layer 10' made of metal such as aluminum is deposited on one side surface of the layer 8'. Thereafter, patterning and etching to allow only the portion X to form electrodes are performed on the layer 10' to form electrodes 10, 12. Then, with the electrodes 10, 12 as masks the layer 8' of the exposed portion is removed, and an ohmic contact layer 8 is formed.</p> |
