| 摘要 |
PURPOSE:To manufacture a low threshold and high efficiency buried semiconductor layer in good reproducibility and high yield by disposing a contracted portion varying in a forward mesa face from a reverse mesa face in a GaAs substrate, and forming an AlGaAs grown layer of a reverse mesa face preferably moistened all with solution. CONSTITUTION:An N-type Al0.4Ga0.6As clad layer 2, an Al0.1Ga0.9As active layer 3, a P-type Al0.4Ga0.6As clad layer 4 and a P-type Al0.15Ga0.85As electrode layer 5 are sequentially grown on an N-type GaAs substrate 1 by first liquid epitaxial growth. Then, with SiO2 as a mask only a light emitting unit remains by chemical etching to etch in a reverse mesa shape. In this case, a contracted portion 11 varying from reverse mesa to a forward mesa is so etched as to depend on the substrate 1. Further, a burying growth is executed by an N-type Al0.4Ga0.5As buried layer 6 to surround the light emitting unit by second liquid epitaxial growth. With an SiO2 film 8 as a mask a P-type diffused layer 7 is eventually formed to form a P-type electrode 9 and an N-type electrode 10.
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