| 摘要 |
PURPOSE:To execute an inverter operation at a high speed by using a transistor of an enhancement type, as a transistor whose drain is connected to a positive power source node. CONSTITUTION:As for the third transistor TR Q3' of a positive power source VDD side in an output stage buffer circuit, that of an enhancement type of N channels is used. When an input node 3 is in a high level (when a TR Q2 and a TR Q4 have become an on-state), the TR Q3' goes to an off-state entirely by a gate-source potential VOS=0V. Therefore, when the TR Q4 goes to an on-state, charge which is charged to a gate capacity of a TR Q6 before that time is discharged by the maximum current capacity of the TR Q4. Also, by discharging the charge which is charged to the gate capacity of the TR Q3', by the TR Q2, it can be operated at a high speed. Accordingly, an inverter operation can be executed at a high speed. |
