| 摘要 |
PURPOSE:To suppress hysteresis by a method wherein the surface of a silicon semiconductor substrate or of a silicon semiconductor layer is exposed to a plasma gas containing nitrogen and hydrogen before a silicon nitride insulating layer is formed by plasma CVD. CONSTITUTION:In a reaction chamber 10 provided with a gas inlet port 14 running through a supporting column 13, a substrate 1 with a silicon semiconductor layer 2 formed thereon is installed on the side, facing an electrode plate 12, of an electrode plate 11. Ammonia is introduced into the reaction chamber 10, a high-frequency power source 15 is connected across the electrode plates 11 and 12, for the exposure of the surface of the silicon semiconductor layer 2 to ammonia plasma. A process follows wherein high-frequency discharge is stopped and a mixture of ammonia and silane is introduced into the reaction chamber 10 for the formation of a silicon nitride insulating layer 3 on the surface of the substrate 1 and semiconductor layer 2 by plasma decomposition. Next, a conductive layer 4 and then an insulating layer 5 is formed on the silicon nitride insulating film 3. Windows 8 and 9 are provided in the insulating layers 3 and 5, respectively, which is followed by the formation of conductive layers 6 and 7. In this way, interfacial level density is reduced between the silicon nitride insulating layer 3 and silicon semiconductor layer 2.
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