DIELECTRIC ISOLATED WAFER

摘要

PURPOSE:To prevent the failure of a wafer by a method wherein, with the peripheral surface of the wafer shaved off in such a way that the outer diameter of the wafer is reduced, the first surface and second surface of the wafer are shaved off deeper toward the outer periphery of the wafer. CONSTITUTION:With the peripheral surface of a wafer where dielectric isolation has taken place shaved off in such a way that the outer diameter of the wafer is reduced, the first surface and second surface of the wafer are shaved off deeper toward the outer periphery of the wafer. The profile of the final DI wafer section is formed into a wedge from toward the end surface of the wafer. Thereby the DI wafer is not subjected to stress due to the thermal expansion of quartz in a high temperature atmosphere and the warpage and the failure of the DI wafer can be prevented.