| 摘要 |
A semiconductor substrate 1 carries a metal layer 5 covered by a phosphosilicate glass layer 7. The metal layers is exposed by dry etching in area 6. In order to provide improved electrical connection between the layer 5 and a wire 10 bonded to it, or between the layer 5 and an overlying metal layer, the layer 5 is treated in the area 6 with an alkaline solution. |
