发明名称 |
APPARATUS FOR PRODUCTION OF CRYSTAL |
摘要 |
PURPOSE:To control temperature distribution in a crystal growing zone in high accuracy and to produce an oxide crystal having high quality, by placing an assistant heater together with a main heater in a crucible. CONSTITUTION:A main heater 17 made of high-purity graphite, etc., is placed at outer circumference of a crucible 11. An assistant heater 18 having a protection cover 19 is placed in the crucible 11 in a manner coaxially encircling a pulled-up crystal 13. The assistant heater 18 eliminates the influence of heat reflected or scattered by the crucible 11 and enables the direct heating of the pulled-up crystal and the accurate control of temperature distribution in the crystal and molten liquid just below the crystal.
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申请公布号 |
JPS62171984(A) |
申请公布日期 |
1987.07.28 |
申请号 |
JP19860012142 |
申请日期 |
1986.01.24 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
HOSHIKAWA KEIGO;KOBAYASHI TAKASHI;KODA HIROKI |
分类号 |
C30B15/14;H01L21/18;H01L21/208 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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