发明名称 APPARATUS FOR PRODUCTION OF CRYSTAL
摘要 PURPOSE:To control temperature distribution in a crystal growing zone in high accuracy and to produce an oxide crystal having high quality, by placing an assistant heater together with a main heater in a crucible. CONSTITUTION:A main heater 17 made of high-purity graphite, etc., is placed at outer circumference of a crucible 11. An assistant heater 18 having a protection cover 19 is placed in the crucible 11 in a manner coaxially encircling a pulled-up crystal 13. The assistant heater 18 eliminates the influence of heat reflected or scattered by the crucible 11 and enables the direct heating of the pulled-up crystal and the accurate control of temperature distribution in the crystal and molten liquid just below the crystal.
申请公布号 JPS62171984(A) 申请公布日期 1987.07.28
申请号 JP19860012142 申请日期 1986.01.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 HOSHIKAWA KEIGO;KOBAYASHI TAKASHI;KODA HIROKI
分类号 C30B15/14;H01L21/18;H01L21/208 主分类号 C30B15/14
代理机构 代理人
主权项
地址