发明名称 VERTICAL CVD APPARATUS
摘要 PURPOSE:To suppress fluctuation of film thickness and form a thick film without spikes by providing slit type nozzle holes to a nozzle projected at the center of a susceptor. CONSTITUTION:A total of six slit type nozzle holes 32,... are provided, with intervals of 60 deg., at the upper part of nozzle body 31. Since the reaction gas can be supplied equally and stably over a wide range from the slit type nozzle hole 32..., fluctuation of the thickness of epitaxial layer in the direction of reaction gas flow can be suppressed. In case a baffle plate 23 is provided, large particles are adhered to the lower surface of the baffle plate and they splash and thereby generation of spikes is suddenly increased. In this case, however, no baffle plate is provided and therefore large size particles are not adhered and do not splash. Accordingly, generation of spikes is not so often even when the film becomes thick. Therefore a thick film can be formed.
申请公布号 JPS62171113(A) 申请公布日期 1987.07.28
申请号 JP19860013062 申请日期 1986.01.24
申请人 TOSHIBA CERAMICS CO LTD;TOKUYAMA CERAMICS KK 发明人 NAKANISHI HIROMITSU;ISHIYAMA NORIO;KAMIMOTO TAKEHIKO
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
代理机构 代理人
主权项
地址