| 摘要 |
PURPOSE:To realize a low-current threshold at 5mA of one figure under the state of room temperature while enabling the mount mounting of a junction- down, and to dissipate heat excellently by coating the whole periphery except the central section of an active layer on the side far from a semiconductor substrate with the same conductivity type semiconductor layer, coating only the central section with a different conductivity type semiconductor layer and burying the whole with a semiconductor layer so that an electrode surface on the side near the active layer is flattened. CONSTITUTION:The whole periphery of a non-doped InGaAsP active layer 3 is surrounded by an N-type InP layer, and a P-type InP clad layer 9 is brought into contact slightly with only the central section of the non-doped InGaAsP active layer 3. Consequently, holes injected from a P side electrode 11 are passed through the central section of the non-doped InGaAsP active layer 3. Accordingly, recombination with electrons is limited to the central section of the non- doped InGaAsP active layer 3. The effective width of the non-doped InGaAsP active layer 3 is inhibited at a small value such as approximately 2mum even at the central section, thus satisfying single transverse mode oscillation in a long-wave length range.
|
