发明名称 |
Device fabrication method using spin-on glass resins |
摘要 |
A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate with a trilevel resist containing a spin-deposited substitute for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.
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申请公布号 |
US4683024(A) |
申请公布日期 |
1987.07.28 |
申请号 |
US19850697645 |
申请日期 |
1985.02.04 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
MILLER, DAVID A.;MORAN, JOSEPH M.;TAYLOR, GARY N. |
分类号 |
G03C1/74;G03C1/00;G03C5/00;G03F7/00;G03F7/09;G03F7/095;G03F7/26;H01L21/027;H01L21/30;H01L21/302;H01L21/3065;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
G03C1/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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