发明名称 PRODUCTION OF BERYL SINGLE CRYSTAL
摘要 PURPOSE:In the production of beryl single crystal, the hydrothermal process in which an aqueous nitrate solution is used as a solvent enables the production of beryl single crystal of high purity with simple installation. CONSTITUTION:In the production of beryl Be3Al2(SiO2)6 single crystal, Al(OH)3 and Be(OH)2 of high purity are placed, as the raw materials for crystal growth 4, in the lower part of the autoclave 1, while SiO2 of high purity is placed in the upper part as the raw material for crystal growth 8, and a natural defect- free beryl single crystal is placed, as a seed, on the frame 5 between them. Further, a baffle plate 7 is set through the frame 5 between the seed crystal 6 and the lower raw materials 4. The autoclave is filled with an aqueous solution of a nitrate such as sodium, potassium or lithium nitrate, the seed crystal is heated up to about 390 deg.C and the pressure is kept at about 800kg/cm<2> for about 30 days to effect the growth of the beryl single crystal of high purity on the seed crystal 6.
申请公布号 JPS62171996(A) 申请公布日期 1987.07.28
申请号 JP19860011392 申请日期 1986.01.22
申请人 KOUKI SHINICHI;SEIKO INSTR & ELECTRONICS LTD 发明人 HIRANO SHINICHI;TOYOKUNI AKIRA;KURODA HIROSHI
分类号 C30B7/10;C30B29/34 主分类号 C30B7/10
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