发明名称 |
Method for forming a deposited film |
摘要 |
A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: SinH2n+2 (n>/=1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate. A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: SinH2n+2 (n>/=1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate. |
申请公布号 |
US4683144(A) |
申请公布日期 |
1987.07.28 |
申请号 |
US19850722133 |
申请日期 |
1985.04.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NISHIMURA, YUKUO;EGUCHI, KEN;MATSUDA, HIROSHI;HARUTA, MASAHIRO;HIRAI, YUTAKA;NAKAGIRI, TAKASHI |
分类号 |
B05D3/06;B05D7/24;C23C16/22;C23C16/48;H01L21/205;(IPC1-7):B05D3/06 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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