| 摘要 |
PURPOSE:To improve the efficiency of the optical coupling of a light-emitting element and an optical waveguide largely by burying the light-emitting element into the optical waveguide wave-guiding light in a monolithic manner. CONSTITUTION:A waveguide 2 is composed of InGaAsP, and an absorption-edge wavelength is brought to 1.3mum. The waveguide 2 is 10mum wide and 5mum thick. A distributed feedback type semiconductor layer 3 is buried into the waveguide. InGaAsP is selected as the component of an active layer 4 so that the oscillation wavelength of a semiconductor laser reaches 1.55mum. The active layer is 0.3mum thick and 5mum wide. An electrode is formed to the upper section of a P-InGaAsP in the laser section. When the laser is oscillated, the efficiency of optical coupling of 90% is acquired. Accordingly, characteristics are improved remarkably at all times as compared to the efficiency of optical coupling of 30% at the time when the distributed feedback type semiconductor laser and the optical waveguide are coupled. |
