| 摘要 |
PURPOSE:To obtain an image sensor element, from which currents hardly leak, by heating an insulating substrate, to which an amorphous silicon layer is formed, at a temperature higher than a substrate temperature at the time of at least the formation of a transference electrode in an atmosphere containing at least oxygen before the film formation of the transference electrode. CONSTITUTION:A substrate is admitted to a sputtering device in order to shape a transference electrode on an amorphous silicon layer 3. The inside of a vac uum tank to which a substrate is mounted is evacuated, a mixed gas at the ratio of Ar to O2 of 9:1 is introduced into the vacuum tank, and the degree of vacuum is kept at 1X10<-2>Pa, continuing exhaust. A substrate temperature is elevated to 200 deg.C by a lamp heater and the substrate is heated for 10-30min, and a thin silicon oxide film 5 is shaped on the surface of the amorphous silicon layer. The lamp heater is interrupted, the substrate temperature is lowered up to 100-150 deg.C, and sputtering is started. The mixed gas flowed during heating may be employed as a sputtering gas, and the composition of the gas may be changed. |
