Process for producing deposition films

摘要

A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of; (A) straight chain silicon hydrides represented by the general formula SinH2n+2 wherein n is an integer 4 or more; (B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formula SimH2m wherein m is 3, 4, 5, or 6; and (C) branched chain silicon hydrides represented by the general formula SipHq wherein p is an integer of 4 or more and q is an interger of 10 or more; in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.