Method for forming deposited film

摘要

A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: <IMAGE> (A) wherein l represents 3, 4 or 5; and R represents H or SiH3; <IMAGE> (B) wherein R1 and R2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11; R1-(SixR2R3)p-R4 (c) wherein R1 and R4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R2 and R3 independently represent H or CH3; and p represents an integer of 3 to 7.