发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To decrease the current of the emitter to which a potential higher than the potential of the collector is given by connecting at least one emitter of multi-emitter structure and a base. CONSTITUTION:A transistor (TR) Q1 of the multi-emitter structure has four emitter electrodes of the same structure, the three emitters are used respectively as input terminals I1, I2 and I3 and the remaining emitter is connected to the base. Figure shows a current state as an example of the input state, two terminals among the three input terminals connect to the high level output of a TTL circuit and the one is connected to a low level output of the TTL circuit. Let the current flowing from a high level input terminal be IE, the current amplification factor at the inverse TR operation of the TR Q1 be betaI, and the current flowing to the resistor R2 be IC, then a current of IB+2betaI.IB /1+betaI+IC flows to the emitter of a low level and the current is smaller than that of a conventional circuit.
申请公布号 JPS62171227(A) 申请公布日期 1987.07.28
申请号 JP19860012374 申请日期 1986.01.22
申请人 NEC CORP 发明人 SUZUKI TAKAMASA
分类号 H01L27/082;G05F3/22;H01L21/331;H01L21/8222;H01L27/08;H01L29/72;H01L29/73;H03K19/088 主分类号 H01L27/082
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