| 摘要 |
PURPOSE:To eliminate limitation on thickness in growth of hetero epitaxial growth of foreign substance such as growth of GaAs onto a substrate by forming a plurality of grooves orthogonally crossing each other to the rear surface of a semiconductor substrate and then stacking a semiconductor single crystal layer, different from a semiconductor substrate, to the surface of semiconductor substrate. CONSTITUTION:The narrow grooves 2 are formed in parallel and in vertical to the orientation flat surface 3 at the rear surface of substrate for epitaxial. A semiconductor substrate material is manufactured allowing a single crystal layer 4 in different quality to growth by the MOCVD method or MBE method directly or through the buffer layer to the surface, where the narrow grooves 2 are not formed, of the substrate 1 for epitaxial. Since the epitaxial substrate 1 is partly thin, stress is alleviated and any crack is not generated even during the thick epitaxial growth. Thickness of substrate is usually 200mum-250mum and narrow grooves are formed by the etching in the depth of 100-150mum or the dicing saw. For the substrate of large diameter of 3 or 4 inch, the grooves are formed in the remaining thickness of 100mum-150mum.
|
